Furnace Processing Systems
Standard Tarius Technology' Furnace Processing Systems include:
- A loading bay comprised of a particle-free load station and non-contact, automatic cantilever loaders.
- A high performance diffusion furnace.
- A source gas cabinet or source and vacuum pump cabinet.
- Processing subsystems for atmospheric or LPCVD processes installed at each tube-level.
- The ASTRA Control System for integrated process programming and operation of all parameters.
Additional systems are available that are configured for manual or automatic push/puller loading.
A furnace system or "bank" includes 4 tube-levels that are stacked within the same footprint. The type and size of a bank is determined by the wafer or substrate size, the processes that are performed and how many wafers are to be processed in a batch.
Processing subsystems are comprised typically of a loader, a process tube or chamber that includes wafer boats and a gas delivery system. For LPCVD, a vacuum system is added. Each subsystem in a bank operates independently.
Tarius Technology processing subsystems are designed to accurately perform most any diffusion, oxidation or LPCVD process. Most processes are offered with guaranteed performance.
To review available processes, please click here.
VIEW OTHER PRODUCTS
- ASTRA Control
- Available Processes
- Processing Subsystems
- Diffusion Furnances
- Small Batch Systems
- Source & Pump Cabinets
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Semiconductor applications. 75 to 150mm diameter wafers.
150 to 300 wafers per batch per tube-level.
30 in. (762mm) thermal flat zone.
Cantilever, push/puller or manual loading.
LPCVD or diffusion processing subsystems.
350℃ to 1350℃ temperature range.
Integrated ASTRA Control System.
Semiconductor applications. 100 to 150mm diameter wafers.
200 to 400 wafers per batch per tube-level.
40 in. (1016mm) thermal flat zone.
Cantilever, push/puller or manual loading.
LPCVD or diffusion processing subsystems.
350℃ to 1350℃ temperature range.
Integrated ASTRA Control System.
Semiconductor applications. 200mm diameter wafers.
150 wafers per batch,typical.
36 in. (914.4mm) thermal flat zone.
Cantilever loading.
LPCVD or diffusion processing subsystems.
400℃ to 1300℃ temperature range.
Integrated ASTRA Control System.
Solar cell applications. Up to 125mm square or pseudo-square substrates.
400 substrates per batch.
LPCVD or diffusion processing subsystems.
Preferred for POCl3 emitter diffusion.
400℃ to 1300℃ temperature range.
Integrated ASTRA Control System.
Solar cell applications. 156mm square or pseudo-square substances.
400 substrates per batch.
Preferred for POCl3 emitter diffusion.
400℃ to 1300℃ temperature range.
Integrated ASTRA Control System.